| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1597035 | Solid State Communications | 2006 | 4 Pages |
Abstract
The electrical conductivity, Seebeck coefficient, and Hall coefficient of three-micron-thick films of amorphous Ge2Sb2Te5 have been measured as functions of temperature from room temperature down to as low as 200 K. The electrical conductivity manifests an Arrhenius behavior. The Seebeck coefficient is p-type with behavior indicative of multi-band transport. The Hall mobility is n-type and low (near 0.07 cm2/V s at room temperature).
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
S.A. Baily, David Emin, Heng Li,