| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1597054 | Solid State Communications | 2006 | 6 Pages |
Abstract
We study the transport properties of a GaAs-based Gunn device under local optical excitation via direct numerical simulation. The simulation results show that the hysteretic transition in between quenched and transit modes. The key mechanism for this kind of transition is related to the formation of a stationary and nonuniform hole profile around the notch regime. Therefore, the development of optical control of the microwave output is reported. In addition, the influence of impact ionization on this nonlinear semiconductor is also discussed in the present study.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
Yuo-Hsien Shiau, Yih-Ferng Peng,