| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1597055 | Solid State Communications | 2006 | 6 Pages |
Abstract
This work presents a single-electron differential amplifier (SEDA), inverter, and non-inverter based on the triple single-dopant quantum-dot (TSDQD) configuration, with new structures. The competition between the field-induced and confinement-related shifts in the wavefunction of the quantum dots yields a field-controllable spatial-displacement single-electron transistor. Deeper impurity levels in quantum dots promise a higher operating temperature and higher on/off current ratios. The I-V characteristics of the device, studied using the transfer Hamiltonian approach (THA), show that the ratio of on/off currents is >80Â 000 and the voltage gain is >4eVDD/Ryâ, where VDD is the applied voltage.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
K.-M. Hung, C.-S. Chen, T.-W. Lin,