| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1597137 | Solid State Communications | 2006 | 6 Pages |
Abstract
We have studied the effects of Mn concentration on the ballistic spin-polarized transport through diluted magnetic semiconductor heterostructures with a single paramagnetic layer. Using a fitted function for zero-field conduction band offset based on the experimental data, we found that the spin current densities strongly depend on the Mn concentration. The magnitude as well as the sign of the electron-spin polarization and the tunnel magnetoresistance can be tuned by varying the Mn concentration, the width of the paramagnetic layer, and the external magnetic field. By an appropriate choice of the Mn concentration and the width of the paramagnetic layer, the degree of spin polarization for the output current can reach 100% and the device can be used as a spin filter.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
Alireza Saffarzadeh,