Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1597139 | Solid State Communications | 2006 | 4 Pages |
Abstract
High quality ZnO films were grown on c-plane sapphire substrate using low temperature ZnO buffer layer by plasma-assisted molecular beam epitaxy. The film deposited at 720 °C showed the lowest value of full-width at half maximum for the symmetric (0002) diffraction peak of about 86 arcsec. The highest electron mobility in the films was about 103–105 cm2/V s. From temperature-dependent Hall effect measurements, the mobility strongly depends on the dislocation density at low temperature region and the polar optical phonon scattering at high temperature, respectively. Moreover, by obtaining the activation energy of the shallow donors, it was supposed that hydrogen was source of n-type conductivity in as-grown ZnO films.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
Yeon Sik Jung, Oleg V. Kononenko, Won-Kook Choi,