Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1597165 | Solid State Communications | 2006 | 5 Pages |
Abstract
High efficient green light emitting diodes (LED) on the basis of GaN/InGaN exhibit indium-rich nanoclusters inside the quantum wells (QW) due to InN–GaN phase decomposition. By direct measurements of the variations in the electronic structure, we show for the first time a correlation between indium-rich nanoclusters and local energy band gap minima. Our investigations reveal the presence of 1–3 nm wide indium rich clusters in these devices with indium concentrations x as large as x∼0.30–0.40 that narrow the band gap locally to energies as small as 2.65 eV. These clusters are able to act as local traps for migrating photon-emitting carriers and seem to boost the overall device performance.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
J.R. Jinschek, R. Erni, N.F. Gardner, A.Y. Kim, C. Kisielowski,