High Er3+ luminescent efficiency in Er-doped SiOx films containing amorphous Si nanodots

Er-doped SiO1.87 films containing amorphous Si nanodots were deposited and heat-treated at the two temperatures 950 and 1100 °C. On the basis of morphological observations, structural characterizations and optical measurements it is concluded that the heat-treatment at 1100 °C results in a 3-fold higher Er3+ luminescent efficiency than the one at 950 °C due to the formation of SiOEr complex rather than the nature of sensitizers.