One dimensional polar surface dominated GaN nanostructures with zigzag morphology

•Zigzag GaN nanostructures were synthesized by a simple vapor confined CVD method.•The zigzag wires have length of 30 μm and diameter of 100 nm.•The side surfaces of the zigzag nanostructures are composed of polar planes.

One dimensional GaN nanostructures with zigzag morphology have been synthesized in large scale by a simple vapor confined chemical vapor deposition (CVD) method. The wires have length and diameter of about 30 μm and 100 nm respectively. The growth process seems to follow a vapor–liquid–solid (VLS) mechanism as evidenced by Au nanoparticles at the end of the wires. The sides surfaces of the diameter-modulated zigzag nanostructures are composed of polar planes {10-11} or {11-22}. The peculiar morphology may result from the minimization of the electrostatic interaction energy caused by polar surface.