| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1606099 | Journal of Alloys and Compounds | 2016 | 5 Pages |
Abstract
Core-shell γ-Fe2O3/Ni2O3 nanoparticles are synthesized by chemical co-precipitation method. Resistive switching memory behaviors, which have resistance ON/OFF ratio of â¼102 and excellent retention property, are observed in the Au/HfSiO/γ-Fe2O3/Ni2O3/HfSiO/Pt structure. Space charge limited current (SCLC) mechanism, which is supported by the fitting current-voltage results, is employed to know the resistive switching memory effects. The transportation of Oxygen vacancy Vo2+, oxygen ion O2â, recombination of oxygen atom and drive of external electric field are responsible for the ON or OFF states observed in device.
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
Guangdong Zhou, Bo Wu, Xiaoqin Liu, Zhiling Li, Shuangju Zhang, Ankun Zhou, Xiude Yang,