Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1606206 | Journal of Alloys and Compounds | 2016 | 6 Pages |
Abstract
A resistive random-access memory based on an Al/SnOx/Pt structure is demonstrated. The SnOx thin films were prepared by DC sputtering at room temperature and different post-deposition thermal treatments carried out. We observe a significant improvement of bipolar resistive switching characteristics after annealing at 300 °C in nitrogen. The obtained memory devices show good stability with a relatively long retention time, exceeding 105 s. The resistance ratio remains above 55 within the duration of 100 endurance cycles. An interface modified space-charge-limited-current model is proposed as a possible switching mechanism. The achieved characteristics of the resistive switching in SnOx films seem to be a promising candidate for nonvolatile memory applications.
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
Jidong Jin, Jiawei Zhang, Remzi E. Kemal, Yi Luo, Peng Bao, Mohammed Althobaiti, David Hesp, Vinod R. Dhanak, Zhaoliang Zheng, Ivona Z. Mitrovic, Steve Hall, Aimin Song,