Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1606463 | Journal of Alloys and Compounds | 2016 | 7 Pages |
Abstract
A facile fabrication of high-quality and large-area tungsten disulfide (WS2) layers is demonstrated using a thermal decomposition of tetrathiotungstates ((NH4)2WS4) with two annealing process. During synthesis, the first annealing step is utilized to achieve lateral epitaxial growth of the WS2 and create seamless and large-area WS2 film. The second annealing step can offer an S-rich and high temperature condition, which is beneficial for the high quality of the WS2 film. Scanning electron microscopy, Raman spectroscopy and atomic force microscopy confirm the presence of large-area and high-quality WS2 film. The crucial role of the S, H2 and the effect of the temperature during the experiment are also investigated. Furthermore, the potential application of the prepared WS2 as a substrate for Raman enhancement is first discussed using R6G molecules as probe molecule.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
Zhen Li, Shouzhen Jiang, Shicai Xu, Chao Zhang, Hengwei Qiu, Peixi Chen, Saisai Gao, Baoyuan Man, Cheng Yang, Mei Liu,