Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1606572 | Journal of Alloys and Compounds | 2016 | 6 Pages |
Abstract
To overcome the practical issues existed in RRAMs application, complementary resistive switching (CRS) and self-compliance effect are investigated to alleviate sneak current issue and avoid external compliance current (Icomp), respectively. It is remarkable that the two resistive switching (RS) behaviors are attempted to achieve in the same system of Pt/HfO2(7.5âx)/Ti(2x)/HfO2(7.5âx)/Pt (x = 0, 2.5, 3.5 nm) device fabricated by magnetron sputtering, i.e., multi-mode resistive switching behaviors are modulated by varying Ti interlayer thickness and operation scheme, such as initial Icomp and applied voltage during reset switching. As indicated by the results, typical bipolar resistive switching (BRS) and CRS behaviors exhibit in Pt/HfO2(â¼4 nm)/Ti(â¼7 nm)/HfO2(â¼4 nm)/Pt devices, and self-compliance effect appears in Pt/HfO2(â¼5 nm)/Ti(â¼5 nm)/HfO2(â¼5 nm)/Pt devices. After investigated the conductive mechanisms, it is proposed adopting conceivable switching mechanism associated with the formation of oxygen vacancy (VO) and metallic conduction filament (CF) to understand CRS and self-compliance effect. The exploration of multi-mode RS behaviors paves the way to improve the flexibility and convenience of RRAMs in actual application.
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
M.J. Wang, F. Zeng, S. Gao, C. Song, F. Pan,