Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1606742 | Journal of Alloys and Compounds | 2016 | 5 Pages |
Abstract
In this work, (2¯01) oriented β-Ga2O3 thin films have been grown on p-type silicon (100) substrates by laser molecular beam epitaxy. β-Ga2O3/Si p-n heterojunctions are formed as a deep ultraviolet (UV) solar-blind photodetector. Those heterojunctions exhibit obvious rectifying characteristics and excellent solar-blind UV photoresponse. The responsivity reaches 370 A/W at 3 V reverse bias under 254 nm UV irradiation. The corresponding external quantum efficiency is over 1.8 Ã 105%. The combination of wide bandgap semiconductor with silicon might open up possibilities for future generation deep UV solar-blind optoelectronic devices.
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
X.C. Guo, N.H. Hao, D.Y. Guo, Z.P. Wu, Y.H. An, X.L. Chu, L.H. Li, P.G. Li, M. Lei, W.H. Tang,