| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1607170 | Journal of Alloys and Compounds | 2016 | 4 Pages |
Abstract
High temperature Hall effect measurements between 873 and 1073Â K in CdTe single crystals, heavily doped by In or Ga at maximal Cd partial vapor pressure were performed. The free electron density results were compared with respective values, obtained by numerical simulation, with satisfactory agreement. The analysis of experimental free electron density values at high-temperature point defect equilibrium allowed performing thermodynamic calculations ascertaining the position of the doubly negatively charged Cd vacancy donor in the CdTe band gap, lying at â¼ECâ0.8Â eV.
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
Petro Fochuk, Oleh Panchuk, Yevhen Nykonyuk, Serhiy Solodin, Lilya Diachenko, Roman Grill, Derek Shaw,