Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1607236 | Journal of Alloys and Compounds | 2016 | 5 Pages |
Abstract
In this study, energy relaxation mechanisms of electrons in AlGaN/AlN/GaN High Electron Mobility Transistor (HEMT) structures with and without in situ Si3N4 passivation were investigated. Although the physical parameters of the samples were all different, the electron-temperature dependent power loss values were found to be identical. The study also sought to fit the current theoretical power loss in the LO-phonon regime to the experimental power-loss per carrier results. The calculated power loss offered a reasonably fit to the experimental data in the electron temperature range between 75 and 250Â K.
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
G. Atmaca, S. Ardali, P. Narin, E. Kutlu, S.B. Lisesivdin, T. Malin, V. Mansurov, K. Zhuravlev, E. Tiras,