Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1607328 | Journal of Alloys and Compounds | 2016 | 21 Pages |
Abstract
The contact behavior of Cu on n-type GaAsN, grown on (100) and (311)A/B GaAs substrates by chemical beam epitaxy, has been investigated by current-voltage (I-V) and capacitance-voltage (C-V) measurements. Both N incorporation and growth orientation are found to influence the electrical properties of Cu/GaAsN Schottky diodes. The increasing N composition leads to an increase in the ideality factor and Schottky barrier height (C-V), whereas a decrease in the carrier concentration in samples with all adopted growth orientations. Compared with (100) and (311)B samples, the Schottky diodes constructed on (311)A GaAsN epilayer exhibit better performance with ideality factor close to 1 and higher barrier height. The interfacial chemical reaction between metal layer and surface atoms on the growth surface is believed to account for the observations.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
Chen Dong, Xiuxun Han, Xin Gao, Yoshio Ohshita, Masafumi Yamaguchi,