| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1607591 | Journal of Alloys and Compounds | 2015 | 5 Pages |
•The resistive switching characteristics of the transparent ITO/O-doped ITO/ITO RRAM cells have investigated.•All ITO-based RRAM cell is achieved using oxygen doping method.•Good endurance and long retention time were observed.
Recently, transparent memory would be useful in invisible electronics. In this work, for the first time we present a feasibility of stable unipolar resistive switching (RS) characteristics with reset current of sub-micron ampere for the fully transparent ITO/oxygen-doped ITO/ITO memory capacitors, i.e., all ITO structures, produced by sputtering method, which shows a high optical transmittance of approximately 80% in the visible region as well as near ultra-violet region. In addition, in a RS test to evaluate a reliability for the proposed memory devices, we observed a stable endurance of >100 cycles and a retention time of >104 s at 85 °C, with a current ratio of ∼102 to ∼103. This result indicates that this transparent memory by engineering the amount of oxygen ions within the ITO films could be a milestone for future see-through electronic devices.
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