Improvement of dielectric flexibility and electrical properties of mechanically flexible thin film devices using titanium oxide materials fabricated at a very low temperature of 100 °C

In this works, we investigated a Ti–O material system integrating with InGaZnO thin film transistor. The Ti–O material system with high bond enthalpy can be functionalized by tuning the amount oxygen vacancies to reach the applicable requirements of gate dielectric and channel. Compared to control IGZO TFTs, the flexible TiOx/IGZO TFT reaches a smaller sub-threshold swing (SS) of 125 mV/decade and a higher field effect mobility of 61 cm2/V s at a very low operating voltage of 1.5 V. Besides, only slight performance degradation was found after bending test.