Article ID Journal Published Year Pages File Type
1609600 Journal of Alloys and Compounds 2015 5 Pages PDF
Abstract

•GO–Fe3O4 nanocomposites/n-Si devices were successfully fabricated.•GO–Fe3O4 nanocomposites/n-Si heterojunction showed good rectifying property.•SCLC conduction was dominated for the current transport in the devices.

The graphene oxide–Fe3O4 nanoparticles (GO–Fe3O4) nanocomposites/n-Si heterojunctions were fabricated and their device performance was examined through the analyses of current–voltage (I–V) and capacitance–voltage (C–V) characteristics at room temperature. It was shown that the GO–Fe3O4 nanocomposites were in contact with the n-type silicon (n-Si). The seventeen different gold (Au) contacts performed on the GO–Fe3O4 nanocomposites displayed the identical I–V characteristics. These results revealed that the GO–Fe3O4 nanocomposites were homogeneously coated on n-Si. Under forward bias current–voltage (I–V) conditions, the ohmic and SCLC (space charge limited current) conduction behaviors were identified at low and higher voltages, respectively. Additionally, it was determined that the values of capacitance could be modified with the reverse and forward biases.

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Related Topics
Physical Sciences and Engineering Materials Science Metals and Alloys
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