One pot solvothermal synthesis of colloidal Cu(In1−xGax)Se2 (CIGS) quantum dots for solar cell applications

The colloidal Cu(In1−xGax)Se2 (CIGS) quantum dots (QDs) were synthesized by a facile one pot solvothermal method. The as-synthesized CIGS QDs having the average particle size of 5–10 nm in range. The hexagonal crystal structure was confirmed with X-ray diffraction spectroscopy. The band gap of the QDs was calculated to be 2.44 eV using UV–visible spectrum. The photovoltaic properties of CIGS QDs were tested by the fabrication of quantum dot sensitized solar cells (QDSCs) via immersing method. The QDSCs showed 0.057% power conversion efficiency (PCE) with the short circuit current (Jsc) of 0.243 mA/cm2, open circuit potential (Voc) of 0.433 V and fill factor (FF) of 54.1%.