Effect of (LiCe) doping in (NaBi)0.48[ ]0.04Bi2Nb1.97W0.03O9 high-temperature ceramics

•The (LiCe)-substitution could improve the dielectric and piezoelectric properties of the ceramics.•A high TC of ∼771 °C was observed in the ceramics with x = 0.05.•Preferable electrical properties were identified in the ceramics (e.g., d33 ∼ 26.1 pC/N, kp ∼ 10.5%, and Qm ∼ 3209).•The ceramics showed good thermal stability.

(LiCe)-modified (NaBi)0.48[ ]0.04Bi2Nb1.97W0.03O9 ceramics were prepared by conventional solid state sintering method, and the effect of doping on the electrical properties was studied. The dense microstructure with a high relative density ρrd (>98.12%) was well developed in this material system, presenting a typical Aurivillius phase structure. The Curie temperature (TC) gradually increases from 766 °C to 776 °C with increasing (LiCe) content, and moreover the addition of (LiCe) significantly increases the piezoelectric constant (d33). The (NaBi)0.43(LiCe)0.05[ ]0.04Bi2Nb1.97W0.03O9 ceramics exhibit optimum electrical properties (e.g., d33 ∼ 26.1 pC/N, kp ∼ 10.5%, and Qm ∼ 3209), together with a relatively high TC (∼771 °C) and good thermal stability until 750 °C. These results indicate that this ceramic is a promising candidate for high-temperature piezoelectric applications.