| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1610714 | Journal of Alloys and Compounds | 2014 | 18 Pages |
Abstract
The yittra-stablized zirconia (YSZ) thin film was deposited on a Nb:SrTiO3 (NSTO) substrate by pulsed laser deposition to form a Pt/YSZ/NSTO heterostructure device. This device exhibits high resistive switching ratio of 105 at a read voltage of â0.1Â V after applied +3Â V/â4Â V pulse voltages. Moreover, the resistance states could be reversibly switched among multilevel resistance states by changing the magnitude of Set or Reset pulse voltages, which shows potential application in multilevel nonvolatile memory devices. The RS mechanism of the device could be attributed to the modulation of YSZ/NSTO Schottky-like junction depletion, which is caused by the carrier injection-trapped/detrapped process under the applied electric field.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
Yongdan Zhu, Meiya Li, Jun Liu, Zhongqiang Hu, Qiangwen Wang, Yuan Zhang, Maocai Wei, Cheng Hu,