SiC nanowire film grown on the surface of graphite paper and its electrochemical performance

3C-SiC nanowire film is synthesized on graphite paper by carbothermal reduction method. The high-aspect-ratio nanowires are flexible and intertwisted with each other to form a porous network structure. Electrochemical properties of SiC nanowire film on the graphite paper substrate are investigated by cyclic voltammetry and galvanostatic charge-discharge tests in 0.1 M H2SO4 solution, revealing ideal capacitive behavior and low contact resistance. The specific capacitances are 25.6 mF cm−2 at 0.2 A cm−2, 37 mF cm−2 at 0.3 A cm−2, 28 mF cm−2 at 0.5 A cm−2 and 28 mF cm−2 at 2.0 A cm−2. 3C-SiC nanowire film exhibits 100% discharge capacity retention after 2000 cycles, showing excellent capacity retention. The 3-dimension porous network structure of graphite paper-supported SiC nanowire film contributes to the high electrochemical performance. The photoelectrocatalytic water splitting to hydrogen production process is also observed under visible light irradiation.