Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1611242 | Journal of Alloys and Compounds | 2014 | 4 Pages |
Abstract
In this letter, a metal–semiconductor–metal ultraviolet photodetector based on NH4+ modified TiO2 film was fabricated. The barrier height between TiO2 and Au electrode was lowered due to the self-assembled NH4+ on TiO2 surface, leading to a significant improvement in the device performance. At 5 V bias, a photocurrent of 84.93 μA and a responsivity of 361.07 A/W were obtained under the irradiation of 300 nm UV light. The dark current was merely 88.8 pA, two orders of magnitude lower than that of the TiO2 device (2.85 nA). The rise time was sharply shortened from 2.735 s to 366.9 ms. The ratio of photocurrent to dark current was nearly 6 orders of magnitude.
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
Guohua Liu, Chen Tao, Min Zhang, Xuehui Gu, Fanxu Meng, Xindong Zhang, Yu Chen, Shengping Ruan,