Relaxor behavior and dielectric properties of Ba1−xBi2x/3Zr0.15Ti0.85O3 solid solution

Ba1−xBi2x/3Zr0.15Ti0.85O3 (BBZT) solid solution ceramics have been prepared by the conventional solid-state reaction method. Starting from the well-known ferroelectric material BaTiO3, we show that coupled substitutions at the Ba and Ti cationic sites are able to improve the properties of the material. The dielectric behaviors of Ba1−xBi2x/3Zr0.15Ti0.85O3 compositions displayed relaxor behavior close to room temperature, which opens promising opportunities for possible applications in the capacitor industry. This optimization was attributed to the Bi cations responsible for the ferroelectric relaxor behavior and the degree of relaxation behavior that increased with bismuth concentration. Raman spectra confirmed the stabilization of the orthorhombic phase at room temperature for x = 0.025, with a mixed phase (orthorhombic and rhombohedral) present at 200 K. The interpretation of the Raman spectra is in good agreement with the dielectric data as a function of composition and temperature.