| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1611990 | Journal of Alloys and Compounds | 2014 | 4 Pages |
•Nanostructured TiO2 thin film memristor.•Hydrothermal growth process.•Mechanism for the resistive switching behavior.•XRD, Raman, AFM, Reflectance of TiO2 thin film.
Fabrication of memristor device (Ag/TiO2/Al) with TiO2 active layer using hydrothermal process is reported. The structural, surface morphological and optical properties of deposited TiO2 films are characterized using X-ray diffraction (XRD), Raman, Atomic force microscope (AFM) and spectroscopic reflectometer techniques respectively. XRD and AFM studies revealed the presence of nanostructured anatase TiO2 with tetragonal crystal structure. The optical reflectance of the deposited TiO2 films is observed to be 15–22% in the visible region. The bipolar resistive switching behavior within the low operating voltage (±0.68 V) is observed in prepared Ag/TiO2/Al memristor. Our results confirm that the hydrothermal route provides breakthrough elucidation in the electronic memory device fabrication. A possible mechanism for the resistive switching behavior has discussed.
