| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1612322 | Journal of Alloys and Compounds | 2014 | 5 Pages |
Abstract
Exciton spectra are studied in Cu2ZnSiSe4 single crystals at 10 and 300Â K by means of reflection spectroscopy. The exciton parameters, dielectric constant and free carriers effective masses are deduced from experimental spectra by calculations in the framework of a model taking into account the spatial dispersion and the presence of a dead-layer. The structure found in the reflectivity was analyzed and related to the theoretical electronic band structure of close related Cu2ZnSiS4 semiconductor.
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
M. Guc, S. Levcenko, L. Dermenji, G. Gurieva, S. Schorr, N.N. Syrbu, E. Arushanov,