Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1612722 | Journal of Alloys and Compounds | 2014 | 4 Pages |
Abstract
A low temperature growth method based on electron cyclotron resonance plasma-enhanced metal organic chemical vapor deposition system (ECR-PEMOCVD) was proposed for the growth of GaN films on ordinary soda-lime glass substrates with Ni as intermediate layer. With this method, high c-orientated crystalline GaN films with atomically smooth surface were achieved on amorphous Ni/glass substrate at an extremely low temperature of â¼480 °C. This GaN/Ni/glass structures have great potential for dramatically improve the scalability and cost of solid-state lighting, since the adverse effects with high temperature process for glass substrates can be effectively suppressed by this technique.
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
M.M. Zhong, F.W. Qin, Y.M. Liu, C. Wang, J.M. Bian, E.P. Wang, H. Wang, D. Zhang,