Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1612734 | Journal of Alloys and Compounds | 2014 | 5 Pages |
Abstract
The 500 nm-thick Sb2Te3 films were deposited onto SiO2/Si substrates using rf magnetron sputtering and annealment at various temperatures for 5 min under an Ar atmosphere. Oxygen incorporated into the films contributed to the compositional stability at an annealing temperature of 320 °C. Samples annealed at 320 °C exhibited conductivity of 1824 S/cm, Seebeck coefficient of 283 μV/K, and a thermal conductivity of 3.0 ± 0.20 W/mK at room temperature, and thermoelectric figure of merit (ZT) of approximately 1.5.
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
Ji-Eun Hong, Sang-Kwon Lee, Soon-Gil Yoon,