| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1612915 | Journal of Alloys and Compounds | 2013 | 4 Pages |
•Ferroelectric polarization switching induces strain and electric charge.•Strain effect competes with charge effect.•Magnetoelectric coupling is strain-mediated at high temperature but charge-mediated at low temperature.
The evolution of the competition and coaction between the ferroelectric field effect and the strain effect with temperature has been studied for the LaMnO3+δ film/Pb(Mg1/3Nb2/3)O3–PbTiO3 crystal heterostructure. The polarization-rotation-induced strain has a dramatic impact on the electronic transport properties at room temperature. Upon cooling, the polarization-rotation-induced interfacial charge effect competes with and finally overwhelms the strain effect, and modulates the transport and magnetic properties of the LaMnO3+δ film reversibly via the depletion or accumulation of hole carriers at interface. The identification of charge carrier-mediated electric-field-control of the electronic transport and magnetic properties would help researchers better understand the magnetoelectric coupling mechanism in manganite film/ferroelectric crystal heterostructures.
