Article ID Journal Published Year Pages File Type
1612915 Journal of Alloys and Compounds 2013 4 Pages PDF
Abstract

•Ferroelectric polarization switching induces strain and electric charge.•Strain effect competes with charge effect.•Magnetoelectric coupling is strain-mediated at high temperature but charge-mediated at low temperature.

The evolution of the competition and coaction between the ferroelectric field effect and the strain effect with temperature has been studied for the LaMnO3+δ film/Pb(Mg1/3Nb2/3)O3–PbTiO3 crystal heterostructure. The polarization-rotation-induced strain has a dramatic impact on the electronic transport properties at room temperature. Upon cooling, the polarization-rotation-induced interfacial charge effect competes with and finally overwhelms the strain effect, and modulates the transport and magnetic properties of the LaMnO3+δ film reversibly via the depletion or accumulation of hole carriers at interface. The identification of charge carrier-mediated electric-field-control of the electronic transport and magnetic properties would help researchers better understand the magnetoelectric coupling mechanism in manganite film/ferroelectric crystal heterostructures.

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Physical Sciences and Engineering Materials Science Metals and Alloys
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