| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1612951 | Journal of Alloys and Compounds | 2014 | 4 Pages |
Abstract
ZnO1-xSex films with various selenium concentrations are deposited on the sapphire substrate (0 0 0 1) by pulsed laser deposition technique. Structural properties of the thin films studied by X-ray diffraction (XRD) and chemical bonding studied by X-ray photoelectron spectroscopy (XPS) reveals that Se is substituted in O site during the growth of ZnO1-xSex films. Optical properties are analyzed by UV-Visible spectrometer. From the plot for (αhÏ
)2 vs photon energy, it is inferred that the band gap energy of ZnO1-xSex gradually reduces to 2.85Â eV with increasing Se concentration.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
Jae-chul Lee, Ji-eun Lee, Ju-won Lee, Jae-choon Lee, N.G. Subramaniam, Tae-won. Kang, Rajeev Ahuja,