Article ID Journal Published Year Pages File Type
1612963 Journal of Alloys and Compounds 2014 7 Pages PDF
Abstract

•CuIn0.7Ga0.3(Se(1−x)Tex)2 compound ingots were prepared from mixtures of pure Cu, In, Ga, Se and Te elements and front contact Al and ohmic contact Mo was prepared by sintering evaporated for different x amounts (0.0 and 0.6) of Te. Se+Te effect in such diodes originated chalcopyrites compounds is a novel search topic.•Some diode parameters such as; ideality factor, barrier height, Richardson constants, flat band barrier heights and temperature coefficients were calculated as a function of temperature in a range of 150–300 K from the I–V measurements and plotted as a function of temperature and Te doping amount.•We report that electrical properties of these two diodes can be defined on the basis of the Thermionic emission (TE) theory with the Gaussian distribution (GD) of the SBH being related to inhomogeneities at the M/S interface. Electrical properties were found to be strongly dependent to temperature and Te amount.•Also surface properties showed us that there became a better morphology in Te rich samples with higher pellets on surface with Te.

Al/p-CuIn0.7Ga0.3(Se(1−x)Tex)2/Mo Schottky barrier diodes (SBD) have been investigated as electrical and morphological. Electrical characterization and surface maps of the prepared CuIn0.7Ga0.3(Se(1−x)Tex)2 (briefly, CIGSeTe) compounds with two different compositions for x = 0.0 and 0.6 were examined in 150–300 K range. CIGSeTe films were grown on Mo back contact. Some electrical parameters such as, ideality factors, n; zero-bias barrier heights, Φbo and Richardson constants were calculated from the current–voltage (I–V) measurements and plotted as a function of temperature. These results verify that electrical properties of these two diodes can be defined on the basis of the Thermionic emission (TE) theory with the Gaussian distribution (GD) of the Schottky barrier height (SBH) being related to inhomogeneities at the metal/semiconductor (MS) interface. On the other hand, we saw a better morphology in Te rich samples. Rms (root mean square) values increased from 8.50 nm to 9.80 nm with higher pellets on surface with Te.

Graphical abstractTwo different compositions of CuIn0.7Ga0.3(Se(1−x)Tex)2 (x = 0. 0 and 0.6) have been synthesized in quartz ampoules coated with carbon. The prepared compounds of CuIn0.7Ga0.3(Se(1−x)Tex)2 for x = 0.0 and 0.6 evaporated on Mo coated glass substrates at 150 °C with electron-beam evaporation system. For schottky contact fabrication Al contact (∼500 nm) was evaporated on Mo/CuIn0.7Ga0.3(Se(1−x)Tex)2 structure. Then electrical properties were characterized with current–voltage (I–V) and capacitance–voltage (C–V) measurements in 150–300 K temperature range. Also AFM images were obtained for Mo/p-CuIn0.7Ga0.3(Se(1−x)Tex)2 structures for x = 0.0 and 0.6 amounts.Figure optionsDownload full-size imageDownload as PowerPoint slide

Related Topics
Physical Sciences and Engineering Materials Science Metals and Alloys
Authors
, , , ,