Synthesis of BSO (Bi4Si3O12) scintillation thin film by sol–gel method

Bismuth silicate (Bi4Si3O12, BSO) thin films have been fabricated by sol–gel process. The stable sol was synthesized by using Bi(NO3)3·5H2O and Si(OC2H5)4 (TEOS) as the precursors, acetic acid and 2-ethoxyethanol as the solvents. The thin film precursor was deposited onto SiO2 substrates by spin-coating at 3000 rpm and was dried at 110 °C. X-ray diffraction showed that BSO phase starts to form at 700 °C and single-phase BSO polycrystalline thin films were obtained at 800 °C. The micromorphology and luminescent properties of coated films were characterized by means of scanning electron microscopy and fluorophotometer respectively.