| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1613489 | Journal of Alloys and Compounds | 2013 | 6 Pages |
Abstract
We have comparatively investigated the electroluminescence (EL) performance from the asymmetric p-Mg0.05Zn0.95O/i-ZnO/n+-GaN and p-Mg0.05Zn0.95O/i-ZnO/n+-Si double-heterojunction light emitting diodes (LEDs) grown on different lattice mismatch substrates. The I-V curve measurements show clear rectification characteristics with a threshold voltage of 3.8 and 6Â V for the p-Mg0.05Zn0.95O/i-ZnO/n+-GaN and p-Mg0.05Zn0.95O/i-ZnO/n+-Si double heterojunctions, respectively. A strong violet-ultraviolet EL emission and no deep-level emission were observed for the p-Mg0.05Zn0.95O/i-ZnO/n+-GaN double heterojunction grown on small lattice-mismatched n+-GaN substrate. In comparison, a dominant visible emission band and a weak ultraviolet emission peak were observed for p-Mg0.05Zn0.95O/i-ZnO/n+-Si double heterojunction grown on large lattice-mismatched n+-Si substrate. The difference between both LEDs is due to different quality of the MgZnO and ZnO layers grown on different lattice mismatch substrates.
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
Yongfeng Li, Bin Yao, Rui Deng, Binghui Li, Zhenzhong Zhang, Chongxin Shan, Dongxu Zhao, Dezhen Shen,