Energy band structure calculations of GaxIn1−xP alloys under the influence of temperature and pressure

•Effect of temperature of GaxIn1−xP alloy was calculated.•Effect of hydrostatic pressure of GaxIn1−xP alloy was calculated.•Refractive index and high frequency dielectric constant were studied.•Good agreement between our results and published data was obtained.

This work is concerned with the dependence of the electronic energy band structures for GaxIn1−xP alloys on temperature and pressure. The calculations are based on local empirical pseudo-potential method (EPM) coupled with the virtual crystal approximation (VCA) which incorporates compositional disorder as an effective potential. The direct and indirect energy band gaps of the considered alloys have been determined over entire composition parameter, x from 0 to 1, temperature from T = 0 K to 500 K and pressure from P=0Kbar to 120 Kbar. In addition, the refractive index and dielectric constant of the considered alloys under the effect of composition, temperature and pressure have also been studied. The ternary alloys GaxIn1−xP is bordered by two binary compounds GaP and InP which have been studied recently by our group. Comparison of the calculated results with the experimental and published data showed good agreement.

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