| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1614207 | Journal of Alloys and Compounds | 2013 | 9 Pages |
Abstract
⺠Systematic band gap engineering to fabricate tandem Cu(In,Ga)Se2 absorption layers. ⺠XRD shows prominent (1 1 2) reflection shift for attributed CIS, CIGS, and CGS phases. ⺠Optical transmittance and reflectance spectrum are improved towards infrared region. ⺠The Cu/In + Ga and Ga/In + Ga effect is matched with highest efficient solar cell. ⺠Tandem CIS/CIGS/CGS layer, the band gap is increased from 1.15 to 2.06 eV.
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
San Kang, Rahul Sharma, Jae-Kwan Sim, Cheul-Ro Lee,