Effect of annealing processes on the structural and electrical properties of the lead-free thin films of (Ba0.9Ca0.1)(Ti0.9Zr0.1)O3

Lead-free thin films of (Ba0.9Ca0.1)(Ti0.9Zr0.1)O3 (BCZT) were prepared on Pt/Ti/SiO2/Si substrates by using sol–gel under three different annealing processes. Under the complex annealing process (CAP), the thin film is composed of a single phase with no trace of secondary phases, well crystallized and has a preferred orientation of (1 0 0). The thin film exhibits homogeneous polycrystalline grains without cracks and pores. The surface of the thin film has smooth surface with a root-mean-square (RMS) roughness of 5.67 nm. The interface between the thin film and the substrate is clear and smooth. The dielectric constant and the remnant polarization of the thin film prepared under CAP are greater than those prepared under the other annealing processes. But the dielectric loss and the coercive field are smaller. These results indicate that, among the three annealing processes, CAP is the best for preparing thin film of BCZT with good properties.

Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slideHighlights► The complex annealing process (CAP) is the best for preparing thin film of BCZT. ► The films prepared under CAP have high phase purity and preferred orientation. ► The films prepared under CAP have better ferroelectric and dielectric properties.