| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1614336 | Journal of Alloys and Compounds | 2013 | 4 Pages |
Low resistive highly transparent indium doped ZnO films have been deposited by spin coating technique. Effect of doping concentrations and post annealing temperatures were studied by optimizing the films on the silicon and glass substrates. The sand dune shaped nanostructures were observed by atomic force microscopy and other structural properties were examined with scanning electron microscopy and X-ray diffraction. Low resistivity value of 1.27 Ω cm was achieved for film deposited on silicon substrate. Films deposited on the glass substrate showed the high transmittance above 80%. Effect of annealing temperature on band gap, figure of merit and refractive index are highlighted in the study.
Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slideHighlights► Sand dune shaped nanostructures of indium doped ZnO has been deposited. ► Low resistivity value of 1.27 Ω-cm was achieved for film deposited on silicon substrate. ► Films annealed at temperature of 375 °C for an hour gave the best opto-electrical results. ► Highest figure of merit was observed for the film with 6% indium doping concentration. ► Increase in the band gap and decrease in the refractive index was obtained after indium doping.
