| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1614370 | Journal of Alloys and Compounds | 2013 | 4 Pages |
We present structural and thermoelectric properties of quaternary selenide Cu6Fe4Sn12Se32 single crystal. Single crystal X-ray structural analysis revealed that Cu6Fe4Sn12Se32 has the cubic thiospinel structure. Low-temperature logarithmic electrical resistivity ln ρ exhibits Mott’s T−1/4 dependence, indicating that three-dimensional variable-range hopping (VRH) is the dominant electrical conduction mechanism. Furthermore, Efros’ T−1/2 dependence of ln ρ appears below 30 K. Thermopower S varies as T1/2 at low temperatures, as expected for the VRH conduction, and reaches 150 μV/K at 300 K. Result of Hall measurement indicates that rather low ρ for a VRH conductor and the large S are attributed to high carrier density and large slope of electron density of states, respectively.
► Structural and thermoelectric properties of Cu6Fe4Sn12Se32 single crystal were investigated. ► Cu6Fe4Sn12Se32 has the cubic thiospinel structure. ► Variable-range hopping is a dominant electrical conduction mechanism at low temperatures. ► Thermopower achieves 150 μV/K around room temperature.
