| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1614381 | Journal of Alloys and Compounds | 2013 | 4 Pages |
Abstract
⺠Tungsten-doped VO2 (W-VO2) films with different annealing conditions were fabricated. ⺠W-VO2 films were found to exhibit a semiconductor-metal transition at 34 °C. ⺠The W atoms have been successfully doped into VO2 film and exist as W6+ in the films. ⺠W-VO2 films possess excellent infrared switching efficiency, i.e. 33%.
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
Zhangli Huang, Changhong Chen, Chaohong Lv, Sihai Chen,