| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1614496 | Journal of Alloys and Compounds | 2013 | 4 Pages |
Abstract
⺠The atomic bonding within a-Si1âxCx:H thin film prepared using PECVD is adjustable via annealing. ⺠With the increased annealing temperature, the content of Si-Hn group and C-Hn group decrease, and more Si-C bonds and sp3 hybridized C clusters form in the a-Si1âxCx:H thin film. ⺠Annealing with increased temperature induces enlarged optical band gap. ⺠The PL efficiency is enhanced via the atomic bonding control.
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
Jiali Han, Xiang Li, Gang Xu, Zhaohui Ren, Ge Shen, Gaorong Han,