| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1614672 | Journal of Alloys and Compounds | 2013 | 5 Pages |
Abstract
⺠A multi-layered Ti/Ni/Ti/Au Ohmic contact to Al-doped ZnO thin films was formed. ⺠The as-deposited metallic contact showed Ohmic behavior. ⺠The lowest specific contact resistivity was 6.69 Ã 10â5 Ω cm2 after 500 °C annealing. ⺠The contact annealed above 600 °C showed Schottky transformation. ⺠Interface diffusions induced by annealing resulted in the Schottky transformation.
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
J.L. Gu, Y.F. Lu, J. Zhang, L.X. Chen, Z.Z. Ye,