| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1614752 | Journal of Alloys and Compounds | 2013 | 5 Pages |
Abstract
⺠High-density and ultra-small In-rich InGaN quantum dots were fabricated. ⺠The growth mechanism of QDs was influenced by NH3 flow rate. ⺠Better carrier confinement and smaller number of defects were achieved. ⺠10% enhancement in light output power for packaged LED lamps was demonstrated.
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
Cheng-Hsueh Lu, Yi-Chang Li, Yen-Hsiang Chen, Sheng-Chieh Tsai, Yen-Lin Lai, Yun-Li Li, Chuan-Pu Liu,