Cu2ZnSnS4 thin films: Facile and cost-effective preparation by RF-magnetron sputtering and texture control

Cu2ZnSnS4 photovoltaic semiconductor films (CZTS) were deposited by RF magnetron sputtering using a home-made Cu2S–ZnS–SnS2–S mixed powder target. The phase information of the CZTS films was studied via X-ray diffraction and Raman scattering techniques. The films prepared at substrate temperatures between 150 °C and 200 °C exhibited strong preferential orientation of grains along <1 1 2>. Higher substrate temperature (over 200 °C) induced a flower-like structure of CZTS films without preferred orientation and the light absorption coefficients were largely enhanced. The energy band gaps of CZTS films deposited at different substrate temperatures were approximate 1.7 eV.

► Highly (1 1 2) oriented Cu2ZnSnS4 (CZTS) films were grown on glass using RF magnetron sputtering. ► We report a single process to fabricate Cu2ZnSnS4 thin film without sulfuration or post annealing. ► Morphology of Cu2ZnSnS4 films is tuned from smooth to flower-like by substrate temperature.