Thickness-dependent field emission from ZnTe films prepared by magnetron sputtering

The thickness effect on the field emission properties of ZnTe films deposited on silicon substrates by magnetron sputtering is investigated. All the films exhibit amorphous structure with nanocrystalline embedded. As the thickness increases, the surface becomes much smoother, while the Zn/Te ratio, the turn-on field and the work function decrease. Their field-emission characteristics show a low turn-on field of 7.5 Vμm−1 and a high current density of 67 μAcm−2 at an electric field of 8.9 Vμm−1. The thickness-dependent electron field emission phenomenon is explained by a space-charge-induced bandbending interlayer model.

► ZnTe films were prepared on silicon substrates by magnetron sputtering. ► The thickness effect on the field emission properties of the films is investigated. ► This effect is explained by a space-charge-induced bandbending interlayer model.