In-situ investigation of the icosahedral Al–Cu–Fe phase formation in thin films

This work is an investigation of the formation by reactive diffusion at high temperatures of the icosahedral phase, i-Al62.5Cu25Fe12.5, in thin films. The samples were prepared by sputtering at room temperature. The elements Al, Cu and Fe were sequentially deposited onto oxidized silicon substrates. The two following stacking sequences, Al/Cu/Fe and Al/Fe/Cu, were investigated. The phase formation was studied using in situ resistivity, in situ X-ray Diffraction and Differential Scanning Calorimetry measurements. Whatever the stacking sequence, the sequences of phase formation evidenced during the heating treatment are similar. However the temperatures of formation for the first phases that are formed are different; they are higher in the case of the Al/Fe/Cu stacking sequence.

► We investigated the phase formation of i-Al62.5Cu25Fe12.5 in thin films. ► We characterized the samples by DSC and in-situ XRD and resistance measurements. ► The resistivity value for i-Al62.5Cu25Fe12.5 was determined.