Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1615605 | Journal of Alloys and Compounds | 2012 | 5 Pages |
Abstract
⺠High-quality epitaxial ZnOS films were grown by PLD using a ZnS ceramic target and O2 as reactive gas. ⺠Single-phase ZnO1âxSx (0 ⩽ x ⩽ 0.23 and 0.94 ⩽ x ⩽ 1) alloys with a wurtzite structure were achieved. ⺠Phase separation was observed in ZnO1âxSx films of 0.23 < x < 0.94. ⺠The S solubility is extended to 0.23 while the O solubility of 0.06 is additionally given. ⺠Ablating the ZnS while oxidizing is an efficient way towards ZnOS alloys formation.
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
Yunbin He, Liangheng Wang, Lei Zhang, Mingkai Li, Xunzhong Shang, Yanyan Fang, Changqing Chen,