| Article ID | Journal | Published Year | Pages | File Type | 
|---|---|---|---|---|
| 1615605 | Journal of Alloys and Compounds | 2012 | 5 Pages | 
Abstract
												⺠High-quality epitaxial ZnOS films were grown by PLD using a ZnS ceramic target and O2 as reactive gas. ⺠Single-phase ZnO1âxSx (0 ⩽ x ⩽ 0.23 and 0.94 ⩽ x ⩽ 1) alloys with a wurtzite structure were achieved. ⺠Phase separation was observed in ZnO1âxSx films of 0.23 < x < 0.94. ⺠The S solubility is extended to 0.23 while the O solubility of 0.06 is additionally given. ⺠Ablating the ZnS while oxidizing is an efficient way towards ZnOS alloys formation.
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											Authors
												Yunbin He, Liangheng Wang, Lei Zhang, Mingkai Li, Xunzhong Shang, Yanyan Fang, Changqing Chen, 
											