Excitation wavelength-dependent near-infrared luminescence from Bi-doped silica glass

We report on excitation wavelength-dependent near-infrared luminescence from Bi-doped silica glass prepared by chemical vapor deposition technique. The peak position of the emission bands shows a complex change between 1120 nm and 1270 nm with increasing excitation wavelength from 280 nm to 980 nm. This behavior can be well explained by existence of two kinds of Bi active centers, Bi0 and Bi+, which contribute to the NIR emissions at 1120 nm and 1267 nm, respectively.

Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slideHighlights► Bi-doped silica glass perform were prepared by MCVD. ► Tunable near-infrared luminescence from Bi-doped silica perform were reported. ► Tentative model was proposed and well explained complicated luminescence phenomenon.