Article ID Journal Published Year Pages File Type
1615953 Journal of Alloys and Compounds 2012 5 Pages PDF
Abstract
► The addition of Ta significantly decreased the resistivity of Ni(Ta)Si thin films. ► Compared to the Ni/Si system, the Ni(Ta)Si films on ultra-thin SOI exhibited remarkably improved thermal stability. ► The low-resistivity window of Ni(Ta)Si silicides was extended to high temperature up to 850 °C. ► This study explained these phenomena in terms of the thermally robust Ni(Ta)Si/SiO2 interface and Ta-accumulated grain boundaries.
Related Topics
Physical Sciences and Engineering Materials Science Metals and Alloys
Authors
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