Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1615953 | Journal of Alloys and Compounds | 2012 | 5 Pages |
Abstract
⺠The addition of Ta significantly decreased the resistivity of Ni(Ta)Si thin films. ⺠Compared to the Ni/Si system, the Ni(Ta)Si films on ultra-thin SOI exhibited remarkably improved thermal stability. ⺠The low-resistivity window of Ni(Ta)Si silicides was extended to high temperature up to 850 °C. ⺠This study explained these phenomena in terms of the thermally robust Ni(Ta)Si/SiO2 interface and Ta-accumulated grain boundaries.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
Kan-Rong Lee, Hung-Tai Chang, Jeng-Kuei Chang, Chung-Jen Tseng, Sheng-Wei Lee,