| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1615995 | Journal of Alloys and Compounds | 2012 | 4 Pages |
In this work we have calculated the structural and electronic properties of GaN1−xBix alloy by using the density functional theory based on the full potential linearized augmented plane wave method (FPLAPW). The calculated lattice parameter of GaN1−xBix alloys shows an increase by increasing the composition x of bismuth (Bi), while a significant deviation from Vegard's law is observed. We have studied the variation of the energy gap and the electron effective masses of the ternary compound with respect to the composition x of Bi.
► The FPLAPW is used to calculate the structural and electronic properties of GaN1−xBix. ► The lattice parameter of GaN1−xBix shows an increase with Bi composition. ► We have studied the variation of the energy gap and the electron effective masses of the ternary compound with respect to the composition x of Bi.
